TC4420 Datasheet, PDF (3/5 Pages) TelCom Semiconductor, Inc – 6A HIGH-SPEED MOSFET DRIVERS

6A HIGH-SPEED MOSFET DRIVERS
1
TC4420
TC4429
ELECTRICAL CHARACTERISTICS: Measured over operating temperature range with 4.5V ≤ V_DD ≤ 18V,
Symbol
Parameter
unless otherwise specified.
Test Conditions
Min
Typ Max
2 _Unit
Input
V_IH
Logic 1 High Input Voltage
V_IL
Logic 0 Low Input Voltage
V_IN (Max)
Input Voltage Range
I_IN
Output
Input Current
V_OH
High Output Voltage
V_OL
Low Output Voltage
R_O
Output Resistance, High
R_O
Output Resistance, Low
Switching Time (Note 1)
t_R
Rise Time
t_F
Fall Time
t_D1
Delay Time
t_D2
Delay Time
Power Supply
I_S
Power Supply Current
V_DD
Operating Input Voltage
0V ≤ V_IN ≤ V_DD
See Figure 1
See Figure 1
I_OUT = 10 mA, V_DD = 18V
I_OUT = 10 mA, V_DD = 18V
Figure 1, C_L = 2500 pF
Figure 1, C_L = 2500 pF
Figure 1
Figure 1
V_IN = 3V
V_IN = 0V
2.4
—
—
V
—
—
0.8
V
–5
— V_DD + 0.3 V
– 10
—
10
µA
3
V_DD – 0.025 —
—
V
—
—
0.025
V
—
3
5
Ω
—
2.3
5
Ω
—
32
60
nsec
—
—
34
50
60
100
4 ^nsec
nsec
—
65
100
nsec
—
0.45
3
mA
—
60
400
µA
4.5
—
18
V
NOTE: 1. Switching times guaranteed by design.
5
VDD = 18V
1
0.1µF
1µF
8
0.1µF
INPUT
2
6
7
TC4429
4
5
OUTPUT
CL = 2500pF
+5V
INPUT
0V
+18V
OUTPUT
0V
10% _{tD1 tF}
90%
10%
90%
tD2
tR
90%
10%
INPUT: 100 kHz, square wave,
t_RISE = t_FALL ≤ 10 nsec
6
7
Figure 1. Switching Time Test Circuit
TELCOM SEMICONDUCTOR, INC.
8
4-227