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TC4420 Datasheet, PDF (3/5 Pages) TelCom Semiconductor, Inc – 6A HIGH-SPEED MOSFET DRIVERS
6A HIGH-SPEED MOSFET DRIVERS
1
TC4420
TC4429
ELECTRICAL CHARACTERISTICS: Measured over operating temperature range with 4.5V ≤ VDD ≤ 18V,
Symbol
Parameter
unless otherwise specified.
Test Conditions
Min
Typ Max
2 Unit
Input
VIH
Logic 1 High Input Voltage
VIL
Logic 0 Low Input Voltage
VIN (Max)
Input Voltage Range
IIN
Output
Input Current
VOH
High Output Voltage
VOL
Low Output Voltage
RO
Output Resistance, High
RO
Output Resistance, Low
Switching Time (Note 1)
tR
Rise Time
tF
Fall Time
tD1
Delay Time
tD2
Delay Time
Power Supply
IS
Power Supply Current
VDD
Operating Input Voltage
0V ≤ VIN ≤ VDD
See Figure 1
See Figure 1
IOUT = 10 mA, VDD = 18V
IOUT = 10 mA, VDD = 18V
Figure 1, CL = 2500 pF
Figure 1, CL = 2500 pF
Figure 1
Figure 1
VIN = 3V
VIN = 0V
2.4
—
—
V
—
—
0.8
V
–5
— VDD + 0.3 V
– 10
—
10
µA
3
VDD – 0.025 —
—
V
—
—
0.025
V
—
3
5
Ω
—
2.3
5
Ω
—
32
60
nsec
—
—
34
50
60
100
4 nsec
nsec
—
65
100
nsec
—
0.45
3
mA
—
60
400
µA
4.5
—
18
V
NOTE: 1. Switching times guaranteed by design.
5
VDD = 18V
1
0.1µF
1µF
8
0.1µF
INPUT
2
6
7
TC4429
4
5
OUTPUT
CL = 2500pF
+5V
INPUT
0V
+18V
OUTPUT
0V
10% tD1 tF
90%
10%
90%
tD2
tR
90%
10%
INPUT: 100 kHz, square wave,
tRISE = tFALL ≤ 10 nsec
6
7
Figure 1. Switching Time Test Circuit
TELCOM SEMICONDUCTOR, INC.
8
4-227