TC429 Datasheet, PDF (3/7 Pages) TelCom Semiconductor, Inc – 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER

6A SINGLE HIGH-SPEED,
CMOS POWER MOSFET DRIVER
1
TC429
ELECTRICAL CHARACTERISTICS: Over operating temperature with 7V ≤ V_DD ≤ 18V, unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
2 ^{Typ Max Unit}
Input
V_IH
V_IL
I_IN
Output
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
0V ≤ V_IN ≤ V_DD
2.4
—
—V
—
—
0.8 V
– 10
—
10 µA
V_OH
High Output Voltage
V_OL
Low Output Voltage
R_O
Output Resistance
Switching Time (Note 1)
V_IN = 0.8V,
I_OUT = 10 mA, V_DD = 18V
V_IN = 2.4V,
I_OUT = 10 mA, V_DD = 18V
V_DD – 0.025 —
—V
—
— 0.025 V
3
—
—
5
Ω
—
—
5
t_R
t_F
t_D1
t_D2
Power Supply
Rise Time
Fall Time
Delay Time
Delay Time
Figure 1, C_L = 2500pF
Figure 1, C_L = 2500pF
Figure 1
Figure 1
—
—
—
—
70
70
nsec
nsec
4
—
—
100 nsec
—
—
120 nsec
I_S
Power Supply Current
NOTE: 1. Switching times guaranteed by design.
V_IN = 3V
—
V_IN = 0V
—
SWITCHING SPEED
—
12 mA
—
1
5
VDD = 18V
1
8
1 µF
0.1 µF
2
INPUT
+5V
TC429
4
5
6
OUTPUT
7
CL= 2500 pF
INPUT: 100 kHz, square wave
tRISE = tFALL ≤ 10 nsec
90%
INPUT
0V
18V
OUTPUT
0V
10%
tD1
90%
10%
tF
tD2
tR
90%
10%
Figure 1. Inverting Driver Switching Time Test Circuit
TELCOM SEMICONDUCTOR, INC.
6
7
8
4-177