TC429 Datasheet, PDF (2/7 Pages) TelCom Semiconductor, Inc – 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER

6A SINGLE HIGH-SPEED,
CMOS POWER MOSFET DRIVER
TC429
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage, Any Terminal ..... V_DD +0.3V to GND – 0.3V
Power Dissipation (T_A ≤ 70°C)
Plastic DIP ......................................................730mW
CerDIP ............................................................800mW
Derating Factors
Plastic DIP ............................ 5.6 mW/°C Above 36°C
CerDIP ...................................................... 6.4 mW/°C
Operating Temperature Range
C Version ............................................... 0°C to +70°C
I Version ........................................... – 25°C to +85°C
E Version .......................................... – 40°C to +85°C
M Version ....................................... – 55°C to +125°C
Maximum Chip Temperature ................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
ELECTRICAL CHARACTERISTICS:
Symbol
Input
V_IH
V_IL
I_IN
Output
V_OH
V_OL
R_O
Parameter
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
High Output Voltage
Low Output Voltage
Output Resistance
I_PK
Peak Output Current
Switching Time (Note 1)
t_R
Rise Time
t_F
Fall Time
t_D1
Delay Time
t_D2
Power Supply
Delay Time
I_S
Power Supply Current
NOTES: 1. Switching times guaranteed by design.
T_A = +25°C with 7V ≤ V_DD ≤ 18V, unless otherwise specified.
Test Conditions
Min
Typ Max
0V ≤ V_IN ≤ V_DD
V_IN = 0.8V,
I_OUT = 10mA, V_DD = 18V
V_IN = 2.4V,
I_OUT = 10mA, V_DD = 18V
V_DD = 18V (See Figure 3)
Figure 1, C_L = 2500pF
Figure 1, C_L = 2500pF
Figure 1
Figure 1
V_IN = 3V
V_IN = 0V
2.4
1.8
—
—
1.3
0.8
– 10
—
10
V_DD – 0.025 —
—
—
—
1.8
—
0.025
2.5
—
1.5
2.5
—
6
—
—
23
35
—
25
35
—
53
75
—
60
75
—
3.5
5
—
0.3
0.5
Unit
V
V
µA
V
V
Ω
A
nsec
nsec
nsec
nsec
mA
4-176
TELCOM SEMICONDUCTOR, INC.