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TC25C25 Datasheet, PDF (3/7 Pages) TelCom Semiconductor, Inc – BICMOS PWM CONTROLLERS
BICMOS PWM CONTROLLERS
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TC25C25
TC35C25
ELECTRICAL CHARACTERISTICS: Unless otherwise stated, these specifications apply for – 40°C < TA <
+85°C for the TC25C25Exx; and 0°C <TA < +70°C for the TC35C25Cxx;
VIN and VDD = 16V; RT = 3.7kΩ; CT = 1000 pF; RD = 760 Ω.
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Parameter
Test Conditions
Min
Typ
Max Units
Supply Voltage Rejection
Slew Rate
Threshold Hysteresis
Total Standby Current
Supply Current
Start-Up Current
PWM Comparator
Min. Duty Cycle
Max Duty Cycle
Input Threshold
Input Threshold
Input Bias Current
Soft Start Section
Soft Start Current
Soft Start Voltage
Shutdown Input Current
Min Shutdown Pulse Width
Shutdown Delay
Shutdown Threshold
Output Drivers (each output)
Output Low Level RDS (ON)
Output High Level RDS (ON)
Rise Time
Fall Time
Power Supply
Supply Current
UV Lockout Threshold
UV Lockout Hysteresis
Start-up Current
VIN = 8V to 18V
CLOAD = 50pF, ACL = 1
V(EA+) = 1V to 3V Pulse, (Note 1)
Note 1, TJ = 25°C
TJ = 25°C, fOSC = 100kHz, (Note 1)
V(CT) = 0.6V
V(CT) = 3.6V
Note 1, TJ = 25°C
VSHUTDOWN = 0V
VSHUTDOWN = 3V
VSHUTDOWN = 3V
VSHUTDOWN = 5V, (Note 1)
VSHUTDOWN = 5V, (Note 1)
ISINK = 20mA
ISOURCE = 20mA
CL = 1nF, (Note 1)
CL = 1nF, (Note 1)
fOSC = 100kHz
90
120
—
1
—
—
0.6
0.8
—
dB
—
V/µsec
—
1
V
3
—
1.2
2.5
mA
—
250
350
µA
—
—
0
%
45
49
—
%
0.5
0.6
0.7
V
4
3.4
3.6
3.7
V
—
—
±1
µA
30
46
75
µA
—
30
100
mV
—
±1
±100
nA
—
130
20
140
40
nsec
220
nsec
5
1.5
2.4
3
V
—
13
25
Ω
—
20
35
Ω
—
55
80
nsec
—
40
65
nsec
6
—
2
3
mA
6.45
7
7.3
V
1.7
2.2
2.5
V
—
75
200
µA
NOTE: 1. Not Tested.
TelCom Semiconductor reserves the right to make changes in the circuitry or specifications detailed in this manual at any time without notice. Minimums
and maximums are guaranteed. All other specifications are intended as guidelines only. TelCom Semiconductor assumes no responsibility for the use of
any circuits described herein and makes no representations that they are free from patent infringement.
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TELCOM SEMICONDUCTOR, INC.
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4-113