TCS3404 Datasheet, PDF (5/40 Pages) TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS – DIGITAL COLOR SENSORS

TCS3404, TCS3414
DIGITAL COLOR SENSORS
TAOS137A − APRIL 2011
Optical Characteristics, V_DD = 3 V, T_A = 255C, GAIN = 64y, Tint = 12ms (unless otherwise noted) (see
Notes 1 and 2)
PARAMETER
TEST
CONDITIONS
Red Channel
MIN TYP MAX
Green Channel
MIN TYP MAX
Blue Channel
Clear Channel
MIN TYP MAX MIN TYP MAX
UNIT
Irradiance
responsivity
R_e (CS
package)
λ_p = 470 nm,
See Note 3
λ_p = 524 nm,
See Note 4
λ_p = 640 nm,
See Note 5
0%
0%
80%
15% 15%
15% 60%
110% 0%
50% 65%
90% 0%
15% 0%
90% 59.0 65.6 72.5
35% 71.2
76.9
(counts/
82.7 μW/
cm²)
15% 80.6 90.1 99.5
Irradiance
responsivity
R_e (FN
package)
λ_p = 470 nm,
See Note 3
λ_p = 524 nm,
See Note 4
λ_p = 640 nm,
See Note 5
0%
0%
80%
15% 10%
15% 60%
110% 0%
50% 65%
90% 0%
15% 0%
90%
35%
15%
56.3 62.5 69.1
72.5 78.4
94.2 105.3
84.3
116.3
(counts/
μW/
cm²)
NOTES: 1. The percentage shown represents the ratio of the respective red, green, or blue channel value to the clear channel value.
2. Optical measurements are made using small-angle incident radiation from a light-emitting diode (LED) optical source.
3. The 470 nm input irradiance is supplied by an InGaN light-emitting diode with the following characteristics:
peak wavelength λ_p = 470 nm, spectral halfwidth Δλ½ = 35 nm, and luminous efficacy = 75 lm/W.
4. The 524 nm input irradiance is supplied by an InGaN light-emitting diode with the following characteristics:
peak wavelength λ_p = 524 nm, spectral halfwidth Δλ½ = 47 nm, and luminous efficacy = 520 lm/W.
5. The 640 nm input irradiance is supplied by a AlInGaP light-emitting diode with the following characteristics:
peak wavelength λ_p = 640 nm, spectral halfwidth Δλ½ = 17 nm, and luminous efficacy = 155 lm/W.
6. Illuminance responsivity R_v is calculated from the irradiance responsivity R_e by using the LED luminous efficacy values stated in
notes 3, 4, and 5 and using 1 lx = 1 lm/m².
Operating Characteristics, V_DD = 3 V, T_A = 255C, (unless otherwise noted) (see Notes 2, 3, and 4)
PARAMETER
TEST CONDITIONS
4×
Gain scaling, relative to 1× gain setting
16×
64×
Dark ADC count value
Maximum digital count value
f_osc Oscillator frequency
Internal integration time tolerance
E_e = 0, 64× gain setting, T_int = 400 ms
Prescale = 1, T_int = 400 ms (Note 1)
Temperature coefficient of responsivity (SYNC mode) λ  700 nm, − 40°C  T_A  85°C
MIN
3.8
15.2
60.8
0
4.2
−5
TYP
4
16
64
3
4.4
± 200
MAX
4.2
16.8
67.2
15
65535
4.6
5
UNIT
counts
counts
MHz
%
ppm/°C
NOTES: 1. At shorter integration times and/or higher Prescale settings, the device will reach saturation of the analog section before the digital
count reaches the maximum 16-bit value. The worst-case (lowest) analog saturation value can be obtained using the formula: Analog
saturation = (fosc(min) ×Tint) ÷Prescale, where Fosc(min) is the minimum oscillator frequency in Hz, and tint is the actual integration
time (internal, manually-timed, or sync-generated) in seconds.
2. Gain is controlled by the gain register (07h) described in the Register section.
3. Measurements taken when the Photodiode field value in the Photodiode Register (06h) is 00b and when the Prescaler field value
in the Gain Register (07h) is 000b.
4. The full scale ADC count value is slew-rate limited for short integration times and is limited by the 16-bit counter for long integration
times. The nominal transition between the two regions is t_int = 65535/5000 = 13.1 ms.
The LUMENOLOGY r Company
r
r
www.taosinc.com
Copyright E 2011, TAOS Inc.
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