THN5601B Datasheet, PDF (4/7 Pages) Tachyonics CO,. LTD – NPN SiGe RF POWER TRANSISTOR

THN5601B
□ APPLICATION INFORMATION (I)
RF performance at Ts ≤ 60 ℃ in common emitter test circuit (see Fig 7)
Mode of Operation
CW, class-AB
f [MHz]
900
VCE [V]
4.8
PL [mW]
600
GP [dB]
≥7
η C [%]
70
10
Gp
[dB] ⁸
6
100
30
η C [%] _{PL 26}
80
[dBm]
22
60
18
14
4
40
10
2
20
6
0
0
8 12 17 21 25 28 30
PL[dBm]
f=900MHz; VCE=4.8V; ICQ=5mA; Ts < 60℃
2
0 4 8 12 16 20 24
Pin[dBm]
f=900MHz; VCE=4.8V; ICQ=5mA; Ts < 60℃
Fig 3. Power gain and collector efficiency v.s
load power (typical value)
Fig 4. Load power v.s input power (typical value)
● Typical Large Signal Impedance
VCE = 4.8V, ICQ = 5mA, Pout = 28dBm
Freq.[MHz]
800
820
840
860
880
900
920
940
960
980
1000
Mag
0.615
0.631
0.65
0.666
0.682
0.698
0.711
0.724
0.735
0.746
0.760
Γ source
Ang
-162.5
-164.0
-165.9
-167.6
-169.5
-171.2
-172.7
-174.5
-175.9
-177.6
-179.3
Mag
0.460
0.478
0.494
0.509
0.524
0.538
0.550
0.563
0.578
0.593
0.600
Γ load
Ang
161.4
159.6
158.0
156.2
154.0
151.9
150.0
147.3
145.0
142.8
140.3
www.tachyonics.co.kr
- 4/7 -
Mar-22-2005
Rev 1.2