THN5601B Datasheet, PDF (1/7 Pages) Tachyonics CO,. LTD – NPN SiGe RF POWER TRANSISTOR

THN5601B
NPN SiGe RF POWER
TRANSISTOR
The THN5601B is a low cost, NPN medium power
SiGe HBT(Hetero-Junction Bipolar Transistor)
encapsulated in a plastic SOT-223 SMD package.
The THN5601B can be used as a driver device or
an output device, depending on the specific app-
lication.
□ FEATURES
o 4.8 Volt operation
o P1dB 28 dBm @f=900MHz
o Power gain 8.5 dB @f=900MHz
□ APPLICATIONS
o Hand-held radio equipment in common
emitter class-AB operation in 900 MHz
communication band.
PIN CONFIGURATION
PIN NO SYMBOL
1
E
2
B
3
E
4
C
DESCRIPTION
emitter
base
emitter
collector
□ MAXIMUM RATINGS
SYMBOL
VCBO
VCEO
VEBO
Ic
PT
TSTG
TJ
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
CONDITION
Open Emitter
Open Base
Open Collector
Ts = 60℃ ; note 1
VALUE
Unit
20
V
8
V
3
V
350
mA
1
W
-65 ~ 150
℃
150
℃
www.tachyonics.co.kr
- 1/7 -
Mar-22-2005
Rev 1.2