THN5601B Datasheet, PDF (3/7 Pages) Tachyonics CO,. LTD – NPN SiGe RF POWER TRANSISTOR

THN5601B
□ DC CHARACTERISTICS
Tj=25 ℃ unless otherwise specified
SYMBOL
PARAMETER
BVCBO
BVCEO
BVEBO
IS
hFE
CCB
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
CONDITION
open emitter
open base
open collector
MIN.
20
8
3
0.1
60
MAX.
4.5
UNIT
V
V
V
mA
pF
160
Hfe ¹⁴⁰
120
100
80
60
40
20
0
0.00
0.10
0.20
0.30
0.40
0.50
Ic(A)
VCE = 4.8V ; Tj =25℃
6
Cc
[pF]
5
4
3
2
0
2
4
6
8
10
VCB [V]
f=900MHz; VCE=4.8V; ICQ=5mA; Ts < 60℃
Fig 1. DC Current gain v.s Collector current
Fig 2. Collector-base capacitance v.s Collector-
base voltage(DC)
www.tachyonics.co.kr
- 3/7 -
Mar-22-2005
Rev 1.2