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THN6501 Datasheet, PDF (3/15 Pages) Tachyonics CO,. LTD – NPN SiGe RF TRANSISTOR
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Total Power Dissipation, PT vs. TA
IC vs. VCE
THN6501 Series
250
200
150
100
50
0
0
25
50
75 100 125 150
Ambient Temperature, TA [℃]
IC vs. VBE
120
VCE = 6 V
100
80
60
40
20
0
0
0.2
0.4
0.6
0.8
1
VBE [V]
80
70
60
IB = 500 ㎂
50
IB = 400 ㎂
40
IB = 300 ㎂
30
20
IB = 200 ㎂
10
IB = 100 ㎂
0
0
2
4
6
8
10
VCE [V]
hFE vs. IC
300
VCE = 3 V
250
200
150
100
50
0
0.1
1
10
100
IC [mA]
www.tachyonics.co.kr
- 3/15 -
Aug.-2005
Rev 2.0
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