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THN6501 Datasheet, PDF (1/15 Pages) Tachyonics CO,. LTD – NPN SiGe RF TRANSISTOR | |||
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NPN SiGe RF TRANSISTOR
â¡ Application
LNA and wide band amplifier up to GHz range
THN6501 Series
SOT 523
Unit in mm
â¡ Features
o Low Noise Figure
NF = 1.0 dB Typ. @ f = 1 GHz, V CE = 3V, IC = 7mA
o High Power Gain
MAG = 15 dB Typ. @ f = 1 GHz, VCE = 3V, IC = 7mA
o High Transition Frequency
fT = 9 GHz Typ. @ VCE = 3 V, IC = 30 mA
Pin Configuration
Pin No
Symbol
1
B
2
E
3
C
Description
Base
Emitter
Collector
â¡ hFE Classification
Marking AB1
AB2
hFE 125 to 300 80 to 160
â¡ Absolute Maximum Ratings
â¡ Available Package
Product
Package
THN6501S
SOT23
THN6501U SOT323
THN6501Z SOT343
THN6501E SOT523
Unit : mm
Dimension
2.9â
¹1.3, 1.2t
2.0â
¹1.25, 1.0t
2.0â
¹1.25, 1.0t
1.6â
¹0.8, 0.8t
Symbol
Parameter
Ratings
Unit
VCBO Collector to Base Breakdown Voltage
20
V
VCEO Collector to Emitter Breakdown Voltage
12
V
VEBO Emitter to Base Breakdown Voltage
2.5
V
IC Collector Current (DC)
100
mA
PT Total Power Dissipation
150
mW
TSTG Storage Temperature
-65 ~ 150
â
TJ Operating Junction Temperature
150
â
Caution : ESD sensitive device
www.tachyonics.co.kr
- 1/15 -
Aug.-2005
Rev 2.0
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