THN6501 Datasheet, PDF (1/15 Pages) Tachyonics CO,. LTD – NPN SiGe RF TRANSISTOR

NPN SiGe RF TRANSISTOR
□ Application
LNA and wide band amplifier up to GHz range
THN6501 Series
SOT 523
Unit in mm
□ Features
o Low Noise Figure
NF = 1.0 dB Typ. @ f = 1 GHz, V _CE = 3V, I_C = 7mA
o High Power Gain
MAG = 15 dB Typ. @ f = 1 GHz, V_CE = 3V, I_C = 7mA
o High Transition Frequency
f_T = 9 GHz Typ. @ V_CE = 3 V, I_C = 30 mA
Pin Configuration
Pin No
Symbol
1
B
2
E
3
C
Description
Base
Emitter
Collector
□ h_FE Classification
Marking AB1
AB2
h_FE 125 to 300 80 to 160
□ Absolute Maximum Ratings
□ Available Package
Product
Package
THN6501S
SOT23
THN6501U SOT323
THN6501Z SOT343
THN6501E SOT523
Unit : mm
Dimension
2.9ⅹ1.3, 1.2t
2.0ⅹ1.25, 1.0t
2.0ⅹ1.25, 1.0t
1.6ⅹ0.8, 0.8t
Symbol
Parameter
Ratings
Unit
V_CBO Collector to Base Breakdown Voltage
20
V
V_CEO Collector to Emitter Breakdown Voltage
12
V
V_EBO Emitter to Base Breakdown Voltage
2.5
V
I_C Collector Current (DC)
100
mA
P_T Total Power Dissipation
150
mW
T_STG Storage Temperature
-65 ~ 150
℃
T_J Operating Junction Temperature
150
℃
Caution : ESD sensitive device
www.tachyonics.co.kr
- 1/15 -
Aug.-2005
Rev 2.0