THN6501 Datasheet, PDF (2/15 Pages) Tachyonics CO,. LTD – NPN SiGe RF TRANSISTOR

THN6501 Series
□ Electrical Characteristics ( T_A = 25 ℃ )
Symbol
Parameter
Test Condition
Value
Min. Typ. Max. ^Unit
I_CBO
Collector Cut-off Current
I_CEO
V_CB = 19 V, I_E = 0 mA
V_CE = 12 V, I_B = 0 mA
0.5 uA
5 uA
I_EBO Emitter Cut-off Current
V_EB = 1 V, I_C = 0 mA
0.5 uA
h_FE DC Current Gain
V_CE = 3 V, I_C = 15 mA
80 150 300
f_T Transition Frequency
V_CE = 3 V, I_C = 30 mA
8
9
GHz
C_CB Collector to Base Capacitance V_CB = 10 V, f = 1 MHz
|S₂₁|² Insertion Power Gain
MAG Maximum Available Gain
NFmin Minimum Noise Figure
rn Noise Resistance
G_A Associated Gain
OIP₃ Output 3rd Order Intercept
V_CE = 3 V, I_C = 7 mA, f = 1 GHz
V_CE = 3 V, I_C = 15 mA, f = 1 GHz
V_CE = 3 V, I_C = 7 mA, f = 1 GHz
V_CE = 3 V, I_C = 15 mA, f = 1 GHz
V_CE = 3 V, I_C = 7 mA, f = 1 GHz
V_CE = 3 V, I_C = 7 mA, f = 1 GHz
V_CE = 3 V, I_C = 7 mA, f = 1 GHz
V_CE = 3 V, I_C = 15 mA, f = 1 GHz
V_CE = 6 V, I_C = 15 mA, f = 1 GHz
0.85
8 9.5
9
11
12.5 14.5
13 15
1.0
0.049
10 12
10 12.5
27
pF
dB
dB
dB
Ω
dB
dBm
www.tachyonics.co.kr
- 2/15 -
Aug.-2005
Rev 2.0