THN6301 Datasheet, PDF (3/11 Pages) Tachyonics CO,. LTD – NPN SiGe RF TRANSISTOR

Total Power Dissipation, P_T vs. T_A
250
200
150
100
50
0
0
2^A5^mbie5ⁿ0^{t Tem}75^perat1^u0^r0^{e, T}1A2^[5^℃]150
I_C vs. V_CE
THN6301 Series
50
40
30
I_B = 200 uA
20
I_B = 150 uA
10
I_B = 100 uA
I_B = 50 uA
0
0 1 2 3 4 5 6 7 8 9 10
V [V]
CE
I_C vs. V_BE
h_FE vs. I_C
20
V_CE = 8 V
15
300
250
V_CE = 8 V
200
10
150
100
5
50
0
0
0.0
0.2
0.4
0.6
0.8
1.0
0.1
1
10
100
V_B^V_E B[EV^[V]^]
I [mA]
C
www.tachyonics.co.kr
- 3/11 -
Aug.-2005
Rev 2.0