THN6301 Datasheet, PDF (1/11 Pages) Tachyonics CO,. LTD – NPN SiGe RF TRANSISTOR

NPN SiGe RF TRANSISTOR
□ Application
LNA and wide band amplifier up to GHz range
SOT 523
THN6301 Series
Unit in mm
□ Features
o Low Noise Figure
NF = 1.1 dB Typ. @ f = 1 GHz, V_CE = 8 V, I_C = 5 mA
o High Power Gain
MAG =18 dB Typ. @ f = 1 GHz, V_CE = 8 V, I_C =15 mA
o High Transition Frequency
f_T = 10 GHz Typ. @ V_CE = 8 V, I_C = 15 mA
□ h_FE Classification
Marking AA1
AA2
h_FE 125 to 300 80 to 160
□ Absolute Maximum Ratings
Pin Configuration
Pin No
Symbol
1
B
2
E
3
C
Description
Base
Emitter
Collector
□ Available Package
Product
Package
THN6301S SOT23
THN6301U SOT323
THN6301Z SOT343
THN6301E SOT523
THN6301KF SOT623F
Unit : mm
Dimension
2.9ⅹ1.3, 1.2t
2.0ⅹ1.25, 1.0t
2.0ⅹ1.25, 1.0t
1.6ⅹ0.8, 0.8t
1.4ⅹ0.8, 0.6t
Symbol
Parameter
VCBO Collector to Base Breakdown Voltage
VCEO
VEBO
Ic
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Current (DC)
PT Total Power Dissipation
TSTG Storage Temperature
TJ Operating Junction Temperature
Caution : ESD sensitive device
Ratings
Unit
25
V
12
V
2.5
V
65
mA
150
mW
-65 ~ 150
℃
150
℃
www.tachyonics.co.kr
- 1/11 -
Aug.-2005
Rev 2.0