THN6301 Datasheet, PDF (2/11 Pages) Tachyonics CO,. LTD – NPN SiGe RF TRANSISTOR

THN6301 Series
□ Electrical Characteristics ( T_A = 25 ℃ )
Symbol
Parameter
Test Condition
I_CBO
Collector Cut-off Current
I_CEO
V_CB = 19 V, I_E = 0 mA
V_CE = 12 V, I_B = 0 mA
I_EBO Emitter Cut-off Current
V_EB = 1 V, I_C = 0 mA
h_FE DC Current Gain
V_CE = 8 V, I_C = 15 mA
f_T Transition Frequency
V_CE = 8 V, I_C = 15 mA
C_CB Collector to Base Capacitance V_CB = 10 V, f = 1 MHz
|S₂₁|² Insertion Power Gain
MAG Maximum Available Gain
NFmin Minimum Noise Figure
rn Noise Resistance
G_A Associated Gain
OIP₃ Output 3rd Order Intercept
V_CE = 8 V, I_C = 7 mA, f = 1 GHz
V_CE = 8 V, I_C = 15 mA, f = 1 GHz
V_CE = 8 V, I_C = 7 mA, f = 1 GHz
V_CE = 8 V, I_C = 15 mA, f = 1 GHz
V_CE = 8 V, I_C = 5 mA, f = 1 GHz
V_CE = 8 V, I_C = 5 mA, f = 1 GHz
V_CE = 8 V, I_C = 5 mA, f = 1 GHz
V_CE = 8 V, I_C = 15 mA, f = 1 GHz
V_CE = 8 V, I_C = 15 mA, f = 1 GHz
Value
Min. Typ. Max. ^Unit
-
-
0.5 uA
-
-
5 uA
-
-
0.5 uA
80 150 300
-
10
- GHz
- 0.55
10 12.5
12 14.5
15 16.5
16 18
-
1.1
- 0.09
- 14.5
- 15.5
-
27
- pF
-
dB
-
-
dB
-
- dB
-Ω
-
dB
-
- dBm
www.tachyonics.co.kr
- 2/11 -
Aug.-2005
Rev 2.0