THM1001TE Datasheet, PDF (3/9 Pages) Tachyonics CO,. LTD – SiGe HBT MMIC POWER AMPLIFIER

THM1001TE
Absolute Maximum Ratings
Parameter
Symbol
Unit
Min
Max
Supply Voltage
Vcc
V
-0.3
+3.6
Control Voltage
V_CTL
V
-0.3
Vcc
Ramping Voltage
V_RAMP
V
-0.3
Vcc
IN
RF Input Power
dBm
+8
T_A
Operating Temperature
ŠC
-40
+85
Range
T_STG
Storage Temperature
ŠC
-40
Range
+150
Tj
Maximum Junction
Temperature
ŠC
+150
Operation in excess of any one of above Absolute Maximum Ratings may result in
permanent damage.
Handling and assembly of this device should be at ESD protected workstations.
DC Electrical Characteristics
Condition : V_CC0=V_CC1=V_CC2=V_RAMP=3.3V, T_A=25,
Input and Output externally matched to 50 Ç® unless otherwise noted.
Symbol Note
Parameter
Min.
Typ.
Max.
Unit
Vcc
Icc
1
¦ICCtemp 3
V_CTL
I_CTL
1
3
V_RAMP
3
Istby
1
Supply Voltage
Supply Current
(Icc=Ivcc0+Ivcc2), V_CTL=3.3V
Supply Current Variation over
Temperature from T_A=25
(-40<T_A<+85)
PA Output Power Control Voltage
Range
Current sunk by V_CTL Pin
Logic High Voltage
Logic Low Voltage
Leakage Current when Vramp=0V,
Vctl=high
3.3
V
90
150
mA
TBD
%
0 ~ VCC
V
130
ɵ
2.4
V
0.4
V
3
10
ɵ
60-8, Gasan-dong, Kumchun-Gu
Seoul, Korea. 153-023
Page 3
http://www.tachyonics.co.kr
Rev. 1.1