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| THM1001TE Datasheet, PDF (1/9 Pages) Tachyonics CO,. LTD – SiGe HBT MMIC POWER AMPLIFIER | |||
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THM1001TE
SiGe HBT MMIC
POWER AMPLIFIER
Description
A monolithic, high-efficiency, silicon-germanium power amplifier IC, the THM1001TE is
designed for 2.4GHz wireless applications including Bluetoothtm Class 1 wireless
technology and 2.4GHz cordless telephone applications. It delivers +23 dBm output
power, making it capable of overcoming insertion losses of up to 3.0dB between amplifier
output and antenna.
The silicon-germanium structure of the THM1001TE, and its exposed-die-pad
package, soldered to the system PCB, provide high thermal conductivity and a
subsequently low junction temperature.
Features
⢠+23 dBm at 44% Power Added Efficiency
⢠Temperature stability better than 1dB
⢠Power-control and Power-down modes
⢠Single 3.3 V Supply Operation
⢠Temperature Rating: -40C to +85C
⢠8 lead Exposed Pad MSOP8 Plastic Package
E_PAD MSOP8
Applications
⢠Bluetoothtm Wireless Technology (Class 1)
⢠USB Dongles, modules
⢠PCMCIA, Flash cards
⢠Access Points
⢠2.4GHz cordless telephone
60-8, Gasan-dong, Kumchun-Gu
Seoul, Korea. 153-023
Page 1
http://www.tachyonics.co.kr
Rev. 1.1
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