SPN6561 Datasheet, PDF (3/8 Pages) SYNC POWER Crop. – Dual N-Channel Enhancement Mode MOSFET

SPN6561
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(TA=25℃ Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min. Typ Max. Unit
V(BR)DSS VGS=0V,ID=250uA
VGS(th) VDS=VGS,ID=250uA
IGSS VDS=0V,VGS=±20V
IDSS
ID(on)
RDS(on)
VDS=30V,VGS=1.0V
VDS=30V,VGS=0.0V
TJ=55℃
VDS≧4.5V,VGS=10V
VDS≧4.5V,VGS=4.5V
VGS = 10V,ID=2.8A
VGS =4.5V,ID=2.1A
gfs VDS=4.5V,ID=2.5A
VSD IS=1.25A,VGS=0V
30
V
1.0
3.0
±100 nA
1
uA
10
6
A
4
0.043 0.060
0.056 0.080
Ω
4.6
S
0.8 1.2 V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=15VGS=10V
ID≡2.5
VDS=15VGS=0V
f=1MHz
VDD=15RL=15
ID≡1.0A,VGEN=10
RG=6Ω
4.5
10
0.8
nC
1.0
240
110
pF
17
8
20
12
30
ns
17
35
8
20
2006/06/05 Ver.1
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