SPN6561 Datasheet, PDF (2/8 Pages) SYNC POWER Crop. – Dual N-Channel Enhancement Mode MOSFET

SPN6561
Dual N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
Symbol
G1
S2
G2
D2
S1
D1
Description
Gate 1
Source 2
Gate 2
Drain 2
Source 1
Drain1
ORDERING INFORMATION
Part Number
Package
SPN6561S26RG
SOT-23-6L
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※ SPN6561S26RG : Tape Reel ; Pb – Free
Part Marking
61YW
ABSOULTE MAXIMUM RATINGS
(TA=25℃ Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
Pulsed Drain Current
TA=25℃
TA=70℃
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient ^{T ≤ 10sec}
Steady State
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
2006/06/05 Ver.1
Typical
30
±20
2.8
2.3
10
1.25
1.15
0.75
-55/150
-55/150
50
90
Unit
V
V
A
A
A
W
℃
℃
℃/W
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