SPN6561 Datasheet, PDF (1/8 Pages) SYNC POWER Crop. – Dual N-Channel Enhancement Mode MOSFET

SPN6561
Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN6561 is the Dual N-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
z Power Management in Note book
z Portable Equipment
z Battery Powered System
z DC/DC Converter
z Load Switch
z DSC
z LCD Display inverter
FEATURES
‹ N-Channel
30V/2.8A,RDS(ON)= 60mΩ@VGS=10V
30V/2.3A,RDS(ON)= 80mΩ@VGS=4.5V
‹ Super high density cell design for extremely low
RDS (ON)
‹ Exceptional on-resistance and maximum DC
current capability
‹ SOT-23-6L package design
PIN CONFIGURATION( SOT-23-6L )
PART MARKING
2006/06/05 Ver.1
Page 1