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| TC1550_08 Datasheet, PDF (3/5 Pages) Supertex, Inc – N- and P-Channel Enhancement-Mode Dual MOSFET | |||
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TC1550
P-Channel Electrical Characteristics (TA = 25°C unless otherwise speciï¬ed)
Sym Parameter
Min Typ Max Units Conditions
BVDSS Drain-to-source breakdown voltage
-500 -
-
V
VGS = 0V, ID = -1.0mA
VGS(th) Gate threshold voltage
-2.0
-
-4.5
V
VGS = VDS, ID = -1.0mA
ÎVGS(th) Change in VGS(th) with temperature
-
3.5
6.0
mV/OC VGS = VDS, ID = -1.0mA
IGSS Gate body leakage current
-
-
100
nA
VGS = ±20V, VDS = 0V
IDSS Zero gate voltage drain current
-
-
-10
µA
VGS = 0V, VDS = Max Rating
-
-
-1.0
mA
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125°C
ID(ON) On-state drain current
-
-90
-
-100 -240 -
mA
VGS = -5.0V, VDS = -25V
VGS = -10V, VDS = -25V
RDS(ON)
Static drain-to-source
on-state resistance
-
85
-
-
80 125
Ω
VGS = -5.0V, ID = -5.0mA
VGS = -10V, ID = -10mA
ÎRDS(ON) Change in RDS(ON) with temperature
- 0.85 -
%/OC VGS = -10V, ID = -10mA
GFS Forward transconductance
25 40
-
mmho VDS = -25V, ID = -10mA
CISS
COSS
CRSS
Input capacitance
Common source output capacitance
Reverse transfer capacitance
-
40 70
-
10 20
-
3.0 10
VGS = 0V,
pF
VDS = -25V,
f = 1.0MHz
td(ON)
tr
td(OFF)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
-
5.0 10
-
8.0 10
-
8.0 15
-
5.0 16
VDD = -25V,
ns
ID = -100mA,
RGEN = 25Ω
VSD Diode forward voltage drop
-
-0.8 -1.5
V
VGS = 0V, ISD = -100mA
trr
Reverse recovery time
-
200
-
ns
VGS = 0V, ISD = -100mA
Notes:
1. All DC parameters 100% tested at 25°C unless otherwise stated. (Pulsed test: 300µs pulse at 2% duty cycle.)
2. All AC parameters sample tested.
P-Channel Switching Waveforms and Test Circuit
0V
Input
-10V
0V
Output
VDD
10%
t(ON
td(O)N)
90%
tr
t(OFF)
td(OFF) tf
90% 90%
10%
10%
Pulse
Generator
RGEN
Input
D.U.T.
RL
VDD
OUTPUT
â 1235 Bordeaux Drive, Sunnyvale, CA 94089 â Tel: 408-222-8888 â www.supertex.com
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