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| TC1550_08 Datasheet, PDF (2/5 Pages) Supertex, Inc – N- and P-Channel Enhancement-Mode Dual MOSFET | |||
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TC1550
N-Channel Electrical Characteristics (TA = 25°C unless otherwise speciï¬ed)
Sym Parameter
Min Typ Max Units Conditions
BVDSS Drain-to-source breakdown voltage
500
-
-
V
VGS = 0V, ID = 1.0mA
VGS(th) Gate threshold voltage
2.0
-
4.0
V
VGS = VDS, ID =1.0mA
ÎVGS(th) Change in VGS(th) with temperature
-
-3.8 -5.0 mV/OC VGS = VDS, ID = 1.0mA
IGSS Gate body leakage current
-
-
100
nA
VGS = ±20V, VDS = 0V
IDSS Zero gate voltage drain current
-
-
10
µA
VGS = 0V, VDS = Max Rating
-
-
1.0
mA
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125°C
ID(ON) On-state drain current
-
100
-
150 350
-
mA
VGS = 5.0V, VDS = 25V
VGS = 10V, VDS = 25V
RDS(ON)
Static drain-to-source
on-state resistance
-
45
-
-
40 60
Ω
VGS = 5.0V, ID = 50mA
VGS = 10V, ID = 50mA
ÎRDS(ON) Change in RDS(ON) with temperature
-
1.0
1.7
%/OC VGS = 10V, ID = 50mA
GFS Forward transconductance
50 100
-
mmho VDS = 25V, ID =50mA
CISS
COSS
CRSS
Input capacitance
Common source output capacitance
Reverse transfer capacitance
-
45 55
-
8.0 10
-
2.0 5.0
VGS = 0V,
pF
VDS = 25V,
f = 1.0MHz
td(ON)
tr
td(OFF)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
-
-
10
-
-
15
VDD = 25V,
-
-
10
ns
ID = 150mA,
RGEN = 25Ω
-
-
10
VSD Diode forward voltage drop
-
0.8
-
V
VGS = 0V, ISD = 500mA
trr
Reverse recovery time
-
300
-
ns
VGS = 0V, ISD = 500mA
Notes:
1. All DC parameters 100% tested at 25°C unless otherwise stated. (Pulsed test: 300µs pulse at 2% duty cycle.)
2. All AC parameters sample tested.
N-Channel Switching Waveforms and Test Circuit
10V
Input
0V
10%
VDD
Output
0V
t(ON)
td(ON) tr
10%
90%
90%
t(OFF)
td(OFF)
tf
10%
90%
Pulse
Generator
RGEN
Input
VDD
RL
OUTPUT
D.U.T.
â 1235 Bordeaux Drive, Sunnyvale, CA 94089 â Tel: 408-222-8888 â www.supertex.com
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