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TC1550 Datasheet, PDF (3/5 Pages) Supertex, Inc – N- and P-Channel Enhancement-Mode Dual MOSFET
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TC1550
N-Channel Electrical Characteristics (cont.)
Symbol Parameter
Min Typ Max
CISS
COSS
CRSS
td(ON)
tr
td(OFF)
tf
VSD
trr
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
-
45 55
-
8.0 10
-
2.0 5.0
-
-
10
-
-
15
-
-
10
-
-
10
-
0.8
-
-
300
-
Units Conditions
VGS = 0V,
pF V = 25V,
DS
f = 1MHz
VDD = 25V,
ns
ID = 150mA,
RGEN = 25Ω
V
VGS = 0V, ISD = 500mA
ns
VGS = 0V, ISD = 500mA
P-Channel Electrical Characteristics (TA = 25°C unless otherwise specified)
Symbol
Parameter
Min Typ Max Units
BVDSS
VGS(th)
ΔVGS(th)
IGSS
Drain-to-SourceBreakdown Voltage
Gate Threshold Voltage
Change in VGS(th) with Temperature
Gate Body Leakage Current
-500 -
-
V
-2.0
-
-4.5
V
-
3.5 6.0 mV/OC
-
-
100
nA
-
-
-10
µA
IDSS
Zero Gate Voltage Drain Current
-
-
-1.0
mA
ID(ON)
On-State Drain Current
-
-90
-
mA
-100 -240 -
RDS(ON)
Static Drain-to-Source
ON-State Resistance
-
85
-
Ω
-
80 125
ΔRDS(ON)
Change in RDS(ON) with Temperature
- 0.85 -
%/OC
GFS
Forward Transconductance
25 40
-
mmho
CISS
Input Capacitance
-
40 70
COSS
Common Source Output Capacitance
-
10 20
pF
CRSS
Reverse Transfer Capacitance
-
3.0 10
td(ON)
Turn-ON Delay Time
-
5.0 10
tr
td(OFF)
Rise Time
Turn-Off Delay Time
-
8.0 10
ns
-
8.0 15
tf
Fall Time
-
5.0 16
VSD
Diode Forward Voltage Drop
-
-0.8 -1.5
V
trr
Reverse Recovery Time
-
200
-
ns
Notes:
(1) All DC parameters 100% tested at 25°C unless otherwise stated. (Pulsed test: 300µs pulse at 2% duty cycle.)
(2) All AC parameters sample tested.
Conditions
VGS = 0V, ID = -1mA
VGS = VDS, ID = -1mA
VGS = VDS, ID = -1mA
VGS = ±20V, VDS = 0V
VGS = 0V, VDS = Max Rating
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125°C
VGS = -5.0V, VDS = -25V
VGS = -10V, VDS = -25V
VGS = -5.0V, ID = -5.0mA
VGS = -10V, ID = -10mA
VGS = -10V, ID = -10mA
VDS = -25V, ID = -10mA
V = 0V,
GS
VDS = -25V,
f = 1MHz
VDD = -25V,
ID = -100mA,
RGEN = 25Ω
VGS = 0V, ISD = -100mA
VGS = 0V, ISD = -100mA
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