TC1550 Datasheet, PDF (2/5 Pages) Supertex, Inc – N- and P-Channel Enhancement-Mode Dual MOSFET

Ordering Information
Device
BV /BV
DSS
DGS
N-Channel
P-Channel
TC1550
500V
-G indicates package is RoHS compliant (‘Green’)
-500V
R (Max)
DS(ON)
N-Channel
P-Channel
60Ω
125Ω
TC1550
Package Option
8-Lead SO
TC1550TG-G
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BV_DSS
BV_DGS
±20V
Operating and storage temperature -55°C to + 150°C
Soldering temperature¹
300°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Note:
1. Distance of 1.6mm from case for 10 seconds.
Pin Configuration
SN 1
N-Channel
GN 2
8 DN
7 DN
SP 3
P-Channel
GP 4
6 DP
5 DP
8-Lead SO Package
(Top View)
N-Channel Electrical Characteristics (T = 25°C unless otherwise specified)
A
Symbol
Parameter
Min Typ Max Units
BV_DSS
V
GS(th)
ΔV_GS(th)
I_GSS
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Change in V_GS(th) with Temperature
Gate Body Leakage Current
500
-
-
V
2.0
-
4.0
V
-
-3.8 -5.0 mV/^OC
-
-
100
nA
-
-
10
µA
I_DSS
Zero Gate Voltage Drain Current
-
-
1.0
mA
I_D(ON)
R_DS(ON)
ΔR_DS(ON)
G_FS
On-State Drain Current
Static Drain-to-Source
ON-State Resistance
Change in R_DS(ON) with Temperature
Forward Transconductance
-
100
-
mA
150 350
-
-
45
-
Ω
-
40 60
-
1.0 1.7 %/^OC
50 100
-
mmho
Conditions
V_GS = 0V, I_D = 1mA
V = V , I =1mA
GS
DS D
V_GS = V_DS, I_D = 1mA
V_GS = ±20V, V_DS = 0V
V_GS = 0V, V_DS = Max Rating
V_DS = 0.8 Max Rating,
V_GS = 0V, T_A = 125°C
V_GS = 5.0V, V_DS = 25V
V_GS = 10V, V_DS = 25V
V_GS = 5.0V, I_D = 50mA
V_GS = 10V, I_D = 50mA
V_GS = 10V, I_D = 50mA
V_DS = 25V, I_D =50mA
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