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| TC1550 Datasheet, PDF (1/5 Pages) Supertex, Inc – N- and P-Channel Enhancement-Mode Dual MOSFET | |||
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N- and P-Channel
Enhancement-Mode Dual MOSFET
TC1550
Features
⺠500V breakdown voltage
⺠Independent N- and P-channels
⺠Electrically isolated N- and P-channels
⺠Low input capacitance
⺠Fast switching speeds
⺠Free from secondary breakdowns
⺠Low input and output leakage
Applications
⺠High voltage pulsers
⺠Ampliï¬ers
⺠Buffers
⺠Piezoelectric transducer drivers
⺠General purpose line drivers
General Description
The Supertex TC1550TG-G consists of a high voltage N-
channel and P-channel MOSFET in an SO-8 package.
These are enhancement-mode (normally-off) transistors
utilizing an advanced vertical DMOS structure and
Supertexâs well-proven silicon-gate manufacturing process.
This combination produces devices with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefï¬cient inherent
in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally
induced secondary breakdown.
Supertexâs vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Typical Application Circuit
+12V
3.3V CMOS
Logic Inputs
VDD1 VDD2 VH
OE
0.47µF 15V
10nF
INA
OUTA
250V
INB
OUTB
10nF
250V
GND VSS1 VSS2 VL
15V
Supertex
MD1210K6
+250V
Piezoelectric
Transducer
Supertex
TC1550TG
-250V
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