ME2302A29T Datasheet, PDF (3/4 Pages) SUNMATE electronic Co., LTD – High-density cell design for ultra low on-resistance

z Typical Performance Characteristics
10
V =2.0V
GS
8
6
V =2.5,3.0,3.5,4.0,4.5V
GS
4
V =1.5V
GS
2
V =1.0V
GS
0
0
1
2
3
4
5
V , Drain-Source Voltage (V)
DS
Figure 1. Output Characteristics
700
f=1.0MHz
600
500
Ciss
400
300
200
100
Coss
Crss
0
0
2
4
6
8
10
V , Drain Source Voltage
DS
Figure 3. Capacitance
1.2
I =50uA,V =VGS
D
DS
1.0
0.8
0.6
0.4
0.2
0.0
-50
0
50
100
150
Tj, Junction Temperature (^oC)
Figure 5. Gate Threshold Vs.Temperature
20
25^oC,V =1.5V
DS
16
12
8
4
0
1.0
1.5
2.0
2.5
3.0
V , Gate-to-Source Voltage (V)
GS
Figure 2. Transfer Characteristics
70
I =3.6A,V =4.5V
D
GS
60
50
40
30
20
10
0
-50
0
50
100
150
Tj, Junction Temperature (^oC)
Figure 4. On-Resistance vs. Temperature
10
1
0.1
0.4
0.6
0.8
1.0
1.2
V , Body Diode Forward Voltage (V)
SD
Figure 6. Body Diode Forward Voltage
vs. Source Current