ME2302A29T Datasheet, PDF (2/4 Pages) SUNMATE electronic Co., LTD – High-density cell design for ultra low on-resistance

z Absolute Maximum Ratings @ T_A = 25°C unless otherwise specified
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation⁽¹⁾
Continuous
Pulsed
Operating and Storage Junction Temperature Range
Symbol
V_DSS
V_GSS
I_D
P_D
T_J, T_STG
Ratings
20
±8
2.5
10
350
-55 to +150
z Electrical Characteristics @ T_A = 25°C unless otherwise specified
Parameter
Symbol
Test Conditions
Min Typ
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage
V_(BR)DSS
V_GS = 0 V, I_D = 10uA
I_DSS
V_DS = 20 V, V_GS = 0 V
I_GSS
V_GS = ±8 V, V_DS = 0 V
ON CHARACTERISTICS⁽²⁾
20
--
--
--
--
--
Gate Threshold Voltage
Static Drain–Source On-Resistance
Forward Transconductance
V_GS(th)
V_DS = V_GS, I_D = 50uA
R_DS(on)
V_GS = 4.5 V, I_D = 3.6 A
V_GS = 2.5 V, I_D = 3.1 A
g_FS
V_DS = 5 V, I_D = 3.6 A
DYNAMIC CHARACTERISTICS
0.4
0.75
--
70
--
90
2
7.7
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
C_oss
C_rss
V_DS = 10 V, V_GS = 0 V,
f = 1.0 MHz
SWITCHING CHARACTERISTICS
--
450
--
70
--
43
Turn–On Delay Time
t_d(on)
--
--
Turn–On Rise Time
Turn–Off Delay Tim
t_r
t_d(off)
V_DD = 5 V, I_D = 3.6A,
V_GS =4.5 V,R_GEN=6Ω
--
--
--
--
Turn–Off Fall Time
t_f
--
--
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage⁽²⁾
V_SD
V_GS = 0 V, I_S = 1.1 A
0.6
0.8
Notes :
(1). Surface Mounted on FR4 Board, t < 10 sec.
(2). Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
Unit
V
V
A
mW
°C
Max Unit
--
V
1
uA
±100
nA
2.0
V
85
mΩ
115
14
S
--
--
pF
--
15
80
nS
60
25
1.15
V