ME2302A29T Datasheet, PDF (1/4 Pages) SUNMATE electronic Co., LTD – High-density cell design for ultra low on-resistance

ME2302
20V N-Channel Enhancement Mode Field Effect Transistor
z Features
V_DS 20V, V_GS 8V, I_D 2.5A,
RDS(ON) = 75mΩ @VGS = 4.5V.
RDS(ON) = 90mΩ @VGS = 2.5V.
Advanced trench process technology
High-density cell design for ultra low on-resistance
Compact and low profile SOT23 package
z General Description
ME2302 is produced with high cell density DMOS trench
technology, which is especially used to minimize on-state
resistance. This device particularly suits low voltage
applications such as portable equipment, power management
and other battery powered circuits, and low in-line power
z Package Information
dissipation are needed in a very small outline surface mount
package. Excellent thermal and electrical capabilities.
z Pin configurations
See Diagram below
③
①
②
SOT23
Unit:mm