STM32F405XX_13 Datasheet, PDF (99/185 Pages) STMicroelectronics – ARM Cortex-M4 32b MCU+FPU, 210DMIPS, up to 1MB Flash/192+4KB RAM, USB OTG HS/FS

STM32F405xx, STM32F407xx
Electrical characteristics
Note:
Symbol
Table 32. LSE oscillator characteristics (f_LSE = 32.768 kHz) ⁽¹⁾
Parameter
Conditions
Min Typ Max Unit
R_F Feedback resistor
-
18.4 -
MΩ
I_DD LSE current consumption
-
-
1
µA
g_m Oscillator Transconductance
t_SU(LSE)(2) startup time
2.8
-
V_DD is stabilized
-
2
- µA/V
-
s
1. Guaranteed by design, not tested in production.
2. t3_{S2U.(7L6S8E)kiHs zthoessctilalarttuiopntiims reemacehaesdu.rTedhisfrovmalutheeismmoemaesnutreitdisfoernaabslteadnd(bayrdscorfytwstaarler)etsooanasttoarbailinzdedit can vary}
significantly with the crystal manufacturer
For information on electing the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
Figure 33. Typical application with a 32.768 kHz crystal
5.3.9
Resonator with
integrated capacitors
CL1
32.768 kH z
resonator
CL2
OSC32_IN
RF
OSC32_OU T
Bias
controlled
gain
fLSE
STM32F
ai17531
Internal clock source characteristics
The parameters given in Table 33 and Table 34 are derived from tests performed under
ambient temperature and V_DD supply voltage conditions summarized in Table 14.
High-speed internal (HSI) RC oscillator
Table 33. HSI oscillator characteristics ⁽¹⁾
Symbol
Parameter
Conditions
Min Typ Max Unit
f_HSI
Frequency
User-trimmed with the RCC_CR
register
-
16
- MHz
-
-
1
%
ACC_HSI
Accuracy of the HSI
oscillator
Factory-
calibrated
t_su(HSI)(3)
HSI oscillator
startup time
1T^A05=°–C4^{(20) to}
–8
-
4.5 %
T_A = –10 to 85 °C⁽²⁾ –4
-
4
%
T_A = 25 °C
–1
-
1
%
-
2.2 4
µs
I_DD(HSI)
HSI oscillator
power consumption
-
60 80 µA
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