STM32F303XD Datasheet, PDF (97/173 Pages) STMicroelectronics – ARM Cortex-M4 32b MCU+FPU, up to 512KB Flash, 80KB SRAM, FSMC, 4 ADCs, 2 DAC ch., 7 comp, 4 Op-Amp, 2.0-3.6 V

STM32F303xD STM32F303xE
Electrical characteristics
Figure 21. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings
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-36
1. Mode 2/B, C and D only. In Mode 1, FMC_NADV is not used.
Table 47. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings⁽¹⁾
Symbol
Parameter
Min
Max
Unit
t_w(NE)
t_{v(NWE_NE)}
t_w(NWE)
t_{h(NE_NWE)}
FMC_NE low time
FMC_NEx low to FMC_NWE low
FMC_NWE low time
FMC_NWE high to FMC_NE high hold
time
3THCLK-1
THCLK+0.5
THCLK-2
THCLK-0.5
3THCLK+2
THCLK+1
THCLK+1
-
t_{v(A_NE)}
FMC_NEx low to FMC_A valid
-
0
t_{h(A_NWE)}
Address hold time after FMC_NWE high THCLK-1.5
-
ns
t_{v(BL_NE)}
FMC_NEx low to FMC_BL valid
-
1
t_{h(BL_NWE)}
FMC_BL hold time after FMC_NWE high THCLK-0.5
-
t_{v(Data_NE)}
Data to FMC_NEx low to Data valid
-
THCLK+ 3
t_{h(Data_NWE)} Data hold time after FMC_NWE high
THCLK+0.5
-
t_{v(NADV_NE)} FMC_NEx low to FMC_NADV low
-
2.5
t_w(NADV)
FMC_NADV low time
-
THCLK+2
1. Based on characterization, not tested in production.
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