STM32L151RDT6 Datasheet, PDF (95/140 Pages) STMicroelectronics – Ultra-low-power 32-bit MCU ARM-based Cortex-M3, 384KB Flash, 48KB SRAM, 12KB EEPROM, LCD, USB, ADC, DAC, memory I/F

STM32L151xD STM32L152xD
Electrical characteristics
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
Table 46. EMI characteristics
Max vs. frequency range
Symbol Parameter Conditions
Monitored
frequency band
4 MHz 16 MHz _{32 MHz}
voltage voltage ^voltage
Unit
range 3 range 2 ^{range 1}
V_DD = 3.3 V,
0.1 to 30 MHz
3
-6
-5
T_A = 25 °C,
30 to 130 MHz
18
4
-7 dBµV
S_EMI
Peak level _{LQFP100 package}
compliant with IEC ^{130 MHz to 1GHz}
15
5
-7
61967-2
SAE EMI Level
2.5
2
1
-
6.3.11
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Table 47. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class Maximum value⁽¹⁾ Unit
V_ESD(HBM)
Electrostatic discharge
voltage (human body model)
T_A = +25 °C, conforming
to JESD22-A114
2
V_ESD(CDM)
Electrostatic discharge
voltage (charge device
model)
T_A = +25 °C, conforming
to JESD22-C101
II
2000
V
500
1. Based on characterization results, not tested in production.
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