STB10N60M2 Datasheet, PDF (9/24 Pages) STMicroelectronics – N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D²PAK

STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2
3
Test circuits
Test circuits
Figure 16. Switching times test circuit for
resistive load
Figure 17. Gate charge test circuit
VDD
VD
VGS
RG
PW
RL
2200
μF
D.U.T.
3.3
μF _VDD
12V
47kΩ
1kΩ
100nF
Vi=20V=VGMAX
2200
μF
IG=CONST
2.7kΩ
100Ω
D.U.T.
VG
47kΩ
PW
AM01468v1
1kΩ
AM01469v1
Figure 18. Test circuit for inductive load
switching and diode recovery times
Figure 19. Unclamped inductive load test circuit
G
25 Ω
A
D
D.U.T.
S
B
AA
FAST
DIODE
L=100μH
B
3.3
B
μF
D
G
RG
S
1000
μF
VDD
Vi
L
VD
2200
3.3
μF
μF
VDD
ID
D.U.T.
AM01470v1
Figure 20. Unclamped inductive waveform
9%5'66
9'
Pw
AM01471v1
Figure 21. Switching time waveform
ton
tdon
tr
toff
tdoff tf
9''
,'0
,'
0
9''
90%
10% VDS
90%
VGS
90%
10%
$0Y
0
10%
AM01473v1
DocID024710 Rev 2
9/24