STB10N60M2 Datasheet, PDF (3/24 Pages) STMicroelectronics – N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D²PAK

STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
V_GS
I_D
I_D
(1)
I_DM
P_TOT
(1)
dv/dt
(2)
dv/dt
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
T_stg Storage temperature
T_j
Max. operating junction temperature
1. I_SD ≤ 7.5 A, di/dt ≤ 400 A/μs; V_{DS peak} < V_(BR)DSS, V_DD=400 V
2. V_DS ≤ 480 V
± 25
7.5
4.9
30
85
15
50
- 55 to 150
Unit
V
A
A
A
W
V/ns
°C
Symbol
Table 3. Thermal data
Parameter
Value
Unit
D²PAK DPAK TO-220 IPAK
R_thj-case Thermal resistance junction-case max
(1)
R_thj-pcb Thermal resistance junction-pcb max
30
R_thj-amb Thermal resistance junction-ambient max
1. When mounted on 1 inch² FR-4, 2 Oz copper board
1.47
50
62.5
°C/W
°C/W
100 °C/W
Symbol
Table 4. Avalanche characteristics
Parameter
Value
Unit
Avalanche current, repetitive or not repetitive
I_{AR (pulse width limited by Tjmax )}
2.5
A
Single pulse avalanche energy (starting
E_{AS Tj=25°C, ID= IAR; VDD=50)}
110
mJ
DocID024710 Rev 2
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