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| STB10N60M2 Datasheet, PDF (1/24 Pages) STMicroelectronics – N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D²PAK | |||
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STB10N60M2, STD10N60M2,
STP10N60M2, STU10N60M2
N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus⢠low Qg
Power MOSFETs in D²PAK, DPAK, TO-220 and IPAK packages
Datasheet â production data
TAB
3
1
D2 PAK
TAB
3
2
1
TO-220
TAB
3
1
DPAK
TAB
3
2
1
IPAK
Figure 1. Internal schematic diagram
, TAB
Features
Order codes VDS @ TJmax
RDS(on)
max
ID
STB10N60M2
STD10N60M2
STP10N60M2
STU10N60M2
650 V
0.600 Ω 7.5 A
⢠Extremely low gate charge
⢠Lower RDS(on) x area vs previous generation
⢠Low gate input resistance
⢠100% avalanche tested
⢠Zener-protected
Applications
⢠Switching applications
Description
AM15572v1
These devices are N-channel Power MOSFETs
developed using a new generation of MDmeshâ¢
technology: MDmesh II Plus⢠low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STB10N60M2
STD10N60M2
STP10N60M2
STU10N60M2
Table 1. Device summary
Marking
Package
2
D PAK
10N60M2
DPAK
TO-220
IPAK
Packaging
Tape and reel
Tube
December 2013
This is information on a product in full production.
DocID024710 Rev 2
1/24
www.st.com
24
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