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| STD1HN60K3 Datasheet, PDF (8/19 Pages) STMicroelectronics – Gate charge minimized | |||
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Electrical characteristics
Figure 14.
EAS (mJ)
60
Maximum avalanche energy vs.
starting TJ
AM15708v1
VDD=50V
ID=1.2 A
50
40
30
20
10
0
0
25 50 75
100
TJ(°C)
STD1HN60K3, STU1HN60K3
8/19
DocID024422 Rev 1
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