STD1HN60K3 Datasheet, PDF (7/19 Pages) STMicroelectronics – Gate charge minimized

STD1HN60K3, STU1HN60K3
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
VGS
(V)
10
VVDDS S
VDS=480V
ID=1.2A
AM15652v1
VDS
(V)
500
8
400
Figure 9. Capacitance variations
C
(pF)
AM15653v1
Ciss
100
6
300
4
200
2
100
0
0
0
2
4
6
8 Qg(nC)
Figure 10. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
1.10
AM15654v1
ID=50µA
1.00
10
Coss
1
0.1
1
Crss
10
100 VDS(V)
Figure 11. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2.5
ID=0.6 A
VGS=10 A
AM15655v1
2.0
1.5
0.90
1.0
0.80
0.5
0.70
-75 -50 -25 0 25 50 75 100 125
TJ(°C)
0
-75 -50 -25 0 25 50 75 100 125 TJ(°C)
Figure 12. Source-drain diode forward
characteristics
Figure 13. Output capacitance stored energy
VSD (V)
0.95
TJ=-50°C
AM15656v1
0.90
0.85
TJ=25°C
0.80
0.75
0.70
0.65
TJ=150°C
0.60
0.55
0.50
0.6 0.7 0.8 0.9 1 1.1 1.2 ISD(A)
Eoss(µJ)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
AM15657v1
200
400
600 VDS(V)
DocID024422 Rev 1
7/19