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| STD1HN60K3 Datasheet, PDF (1/19 Pages) STMicroelectronics – Gate charge minimized | |||
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STD1HN60K3, STU1HN60K3
N-channel 600 V, 6.7 Ω typ., 1.2 A SuperMESH3⢠Power MOSFET
in DPAK and IPAK packages
Datasheet â production data
TAB
3
1
DPAK
TAB
3
2
1
IPAK
Figure 1. Internal schematic diagram
D(2, TAB)
Features
Order codes VDS
STD1HN60K3
600 V
STU1HN60K3
RDS(on)
max
8Ω
ID
PTOT
1.2 A 27 W
⢠100% avalanche tested
⢠Extremely high dv/dt capability
⢠Gate charge minimized
⢠Very low intrinsic capacitance
⢠Improved diode reverse recovery
characteristics
⢠Zener-protected
Applications
⢠Switching applications
G(1)
S(3)
AM01476v1
Description
These SuperMESH3⢠Power MOSFETs are the
result of improvements applied to
STMicroelectronicsâ SuperMESH⢠technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
Order codes
STD1HN60K3
STU1HN60K3
Table 1. Device summary
Marking
Package
1HN60K3
DPAK
IPAK
Packaging
Tape and reel
Tube
April 2013
This is information on a product in full production.
DocID024422 Rev 1
1/19
www.st.com
19
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