STB11N52K3 Datasheet, PDF (8/20 Pages) STMicroelectronics – N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET

Electrical characteristics
STB11N52K3, STF11N52K3, STP11N52K3
Figure 14. Source-drain diode forward
characteristics
Figure 15. Normalized B_VDSS vs temperature
VSD (V)
0.9
TJ=-50°C
AM09123v1
BVDSS
(norm)
AM09122v1
0.8
TJ=25°C
1.10
0.7
TJ=150°C
0.6
1.05
0.5
0.4
1.00
0.3
0.2
0.95
0.1
0
0
1
2
3
4
5 ISD(A)
0.90
-75
-25
25
75 125 TJ(°C)
Figure 16. Maximum avalanche energy vs
starting Tj
EAS (mJ)
180
160
ID=5 A
VDD=50 V
AM09124v1
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 TJ(°C)
8/20
Doc ID 018868 Rev 2