STB11N52K3 Datasheet, PDF (7/20 Pages) STMicroelectronics – N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET

STB11N52K3, STF11N52K3, STP11N52K3
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on resistance
VGS
(V)
VDS
12
VDD=420V
ID=10A
10
8
6
4
2
0
0
20
40
60
AM09116v1
400
350
300
250
200
150
100
50
0
Qg(nC)
RDS(on) (Ω)
0.54
0.52
0.50
0.48
0.46
0.44
0.42
0.40
0.38
0.36
0
VGS=10V
AM09117v1
2 4 6 8 10 12 ID(A)
Figure 10. Capacitance variations
C
(pF)
1000
100
10
1
0.1
1
10
100
Figure 11. Output capacitance stored energy
AM09118v1
Eoss (µJ)
AM09119v1
6
5
Ciss
4
3
Coss
2
Crss
1
VDS(V)
0
0 100 200 300 400 500 VDS(V)
Figure 12. Normalized gate threshold voltage Figure 13. Normalized on resistance vs
vs temperature
temperature
VGS(th)
(norm)
1.10
AM09120v1
RDS(on)
(norm)
2.5
ID=1.2A
AM09121v1
1.00
2.0
0.90
0.80
0.70
-75 -25
25
75 125 TJ(°C)
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 TJ(°C)
Doc ID 018868 Rev 2
7/20