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| STB11N52K3 Datasheet, PDF (1/20 Pages) STMicroelectronics – N-channel 525 V, 0.41 ohm, 10 A SuperMESH3 Power MOSFET | |||
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STB11N52K3, STF11N52K3
STP11N52K3
N-channel 525 V, 0.41 Ω, 10 A SuperMESH3⢠Power MOSFET
in D²PAK,TO-220FP and TO-220 packages
Datasheet â production data
Features
Order codes VDSS
STB11N52K3
STF11N52K3
STP11N52K3
525 V
RDS(on)
max.
< 0.51 Ω
ID
Pw
125 W
10 A 30 W
125 W
â 100% avalanche tested
â Extremely high dv/dt capability
â Gate charge minimized
â Very low intrinsic capacitance
â Improved diode reverse recovery
characteristics
â Zener-protected
Applications
â Switching applications
TAB
3
2
1
TO-220
TAB
3
2
1
TO-220FP
3
1
D²PAK
Figure 1. Internal schematic diagram
D(2,TAB)
Description
These devices are N-channel Power MOSFETs
made using the SuperMESH3⢠technology that
is obtained via improvements applied to
STMicroelectronicsâ SuperMESH⢠technology
combined with a new optimized vertical structure.
The resulting transistor has an extremely low on
resistance, superior dynamic performance and
high avalanche capability, making it especially
suitable for the most demanding applications.
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order codes
STB11N52K3
STF11N52K3
STP11N52K3
Marking
11N52K3
Packages
D²PAK
TO-220FP
TO-220
Packaging
Tape and reel
Tube
Tube
March 2012
This is information on a product in full production.
Doc ID 018868 Rev 2
1/20
www.st.com
20
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