PD57045-E Datasheet, PDF (8/20 Pages) STMicroelectronics – RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Typical performance
Figure 11. Output power vs bias curren
PD57045-E, PD57045S-E
Figure 12. Drain efficiency vs bias current
60
50
40
30
20
0
Pin = 1.5 W
Vdd = 28 V
f = 945 MHz
200
400
600
800
Idq, BIAS CURRENT (mA)
1000
70
60
50
40
Pin = 1.5 W
Vdd = 28 V
f = 945 MHz
30
0
200
400
600
800
1000
Idq, BIAS CURRENT (mA)
Figure 13. Output power vs drain voltage
Figure 14. Output power vs gate bias voltage
80
70
f = 945 MHz
Vdd = 28 V
Idq = 250 mA
60
50
Pin =3 W
Pin = 2 W
Pin = 1.5 W
40
Pin = 1 W
30
20
10
16 18 20 22 24 26 28 30 32 34
VDS, DRAIN-SOURCE VOLTAGE (V)
50
40
30
20
Pin = 1.5 W
10
Vdd = 28 V
f = 945 MHz
0
0
0.5
1
1.5
2
2.5
3
3.5
4
VGS, GATE BIAS VOLTAGE (V)
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Doc ID 12616 Rev 2