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PD57045-E Datasheet, PDF (4/20 Pages) STMicroelectronics – RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
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Electrical characteristics
2
Electrical characteristics
PD57045-E, PD57045S-E
2.1
TCASE = +25 oC
Static
Table 4. Static
Symbol
V(BR)DSS
IDSS
IGSS
VGS(Q)
VDS(ON)
gFS
CISS
COSS
CRSS
VGS = 0
VGS = 0
VGS = 20 V
VDS = 28 V
VGS = 10 V
VDS = 10 V
VGS = 0
VGS = 0
VGS = 0
Test conditions
IDS = 1 mA
VDS = 28 V
VDS = 0
ID = 250 mA
ID = 3 A
ID = 4 A
VDS = 28 V
VDS = 28 V
VDS = 28 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
Min Typ Max Unit
65
V
1 µA
1 µA
2.0
5.0 V
0.7 0.9 V
2.0 2.7
mho
86
pF
47
pF
3.6
pF
2.2
Dynamic
Table 5. Dynamic
Symbol
Test conditions
Min. Typ. Max. Unit
P1dB VDD = 28 V IDQ = 250 mA
f = 945 MHz 45
GP
VDD = 28 V IDQ = 250 mA POUT = 45 W f = 945 MHz 13
ηD
VDD = 28 V IDQ = 250 mA POUT = 45 W f = 945 MHz 50
Load VDD = 28 V IDQ = 250 mA POUT = 45 W f = 945 MHz 10:1
mismatch All phase angles
14.5
W
dB
%
VSWR
2.3
Moisture sensitivity level
Table 6.
Moisture sensitivity level
Test methodology
J-STD-020B
Rating
MSL 3
4/20
Doc ID 12616 Rev 2
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