PD57045-E Datasheet, PDF (6/20 Pages) STMicroelectronics – RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Typical performance
4
Typical performance
PD57045-E, PD57045S-E
Figure 3. Capacitance vs drain voltage
Figure 4. Drain current vs gate voltage
C (pF)
1000
4
3.5
Vds= 10 V
3
100
C iss
2.5
Coss
2
1.5
10
1
f=1 M Hz
C rs s
0.5
1
0
0
5
10
15
20
25
30
2.5
3
3.5
4
4.5
5
VDS (V)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 5. Gate-source voltage vs
case temperature
Figure 6. Safe operating area
1.04
Id (A)
10
1.02
1
0.98
0.96
-25
VDS = 10 V
ID = 3A
ID = 2A
ID = 1.5 A
ID = 1 A
ID = .25 A
0
25
50
75
Tc, CASE TEMPERATURE (°C)
1
0.1
1
Tj = 165 C
Tc = 100 C
Tc = 70 C
Tc = 25 C
10
100
Vds (V)
6/20
Doc ID 12616 Rev 2