English
Language : 

STM32L151RBH6 Datasheet, PDF (75/121 Pages) STMicroelectronics – Ultra-low-power 32-bit MCU ARM-based Cortex-M3, 128KB Flash, 16KB SRAM, 4KB EEPROM, LCD, USB, ADC, DAC
◁
STM32L151x6/8/B, STM32L152x6/8/B
Electrical characteristics
Table 36. Flash memory, data EEPROM endurance and data retention
Symbol
Parameter
Conditions
Value
Min(1) Typ Max
Unit
NCYC(2)
Cycling (erase / write )
Program memory
Cycling (erase / write )
EEPROM data memory
10
TA = -40°C to
105 °C
300
Data retention (program memory) after
10 kcycles at TA = 85 °C
TRET = +85 °C
30
Data retention (EEPROM data memory)
tRET(2) after 300 kcycles at TA = 85 °C
30
Data retention (program memory) after
10 kcycles at TA = 105 °C
10
TRET = +105 °C
Data retention (EEPROM data memory)
after 300 kcycles at TA = 105 °C
10
1. Based on characterization not tested in production.
2. Characterization is done according to JEDEC JESD22-A117.
kcycles
years
6.3.9
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
● Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
● FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and
VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 37. They are based on the EMS levels and classes
defined in application note AN1709.
Table 37. EMS characteristics
Symbol
Parameter
Conditions
Level/
Class
VFESD
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
VDD = 3.3 V, LQFP100, TA = +25 °C,
fHCLK = 32 MHz
conforms to IEC 61000-4-2
2B
VEFTB
Fast transient voltage burst limits to be
applied through 100 pF on VDD and VSS
pins to induce a functional disturbance
VDD = 3.3 V, LQFP100, TA = +25 °C,
fHCLK = 32 MHz
4A
conforms to IEC 61000-4-4
Doc ID 17659 Rev 8
75/121
 ▷