STM32L151RBH6 Datasheet, PDF (71/121 Pages) STMicroelectronics – Ultra-low-power 32-bit MCU ARM-based Cortex-M3, 128KB Flash, 16KB SRAM, 4KB EEPROM, LCD, USB, ADC, DAC

STM32L151x6/8/B, STM32L152x6/8/B
Electrical characteristics
6.3.6
Internal clock source characteristics
The parameters given in Table 30 are derived from tests performed under ambient
temperature and V_DD supply voltage conditions summarized in Table 14.
High-speed internal (HSI) RC oscillator
Table 30. HSI oscillator characteristics
Symbol
Parameter
Conditions
Min Typ Max Unit
f_HSI Frequency
(1)(2) ^{HSI user-trimmed}
TRIM
resolution
Accuracy of the
ACC_HSI(2) factory-calibrated
HSI oscillator
t_SU(HSI)(2)
HSI oscillator
startup time
V_DD = 3.0 V
Trimming code is not a multiple of 16
16
MHz
± 0.4 0.7 %
Trimming code is a multiple of 16
V_DDA = 3.0 V, T_A = 25 °C
-1⁽³⁾
V_DDA = 3.0 V, T_A = 0 to 55 °C
-1.5
V_DDA = 3.0 V, T_A = -10 to 70 °C
-2
V_DDA = 3.0 V, T_A = -10 to 85 °C
-2.5
V_DDA = 3.0 V, T_A = -10 to 105 °C
-4
V_DDA = 1.65 V to 3.6 V
-4
T_A = -40 to 105 °C
± 1.5 %
1⁽³⁾ %
1.5 %
2%
2%
2%
3%
3.7 6 µs
I_DD(HSI)(2)
HSI oscillator
power consumption
100 140 µA
1. The trimming step differs depending on the trimming code. It is usually negative on the codes which are
multiples of 16 (0x00, 0x10, 0x20, 0x30...0xE0).
2. Based on characterization, not tested in production.
3. Tested in production.
Low-speed internal (LSI) RC oscillator
Table 31. LSI oscillator characteristics
Symbol
Parameter
Min
Typ
Max
f_LSI(1)
LSI frequency
26
38
56
D_LSI(2)
t_su(LSI)(3)
I_DD(LSI)(3)
LSI oscillator frequency drift
0°C ≤ T_A ≤ 85°C
LSI oscillator startup time
LSI oscillator power consumption
-10
4
200
400
510
1. Tested in production.
2. This is a deviation for an individual part, once the initial frequency has been measured.
3. Guaranteed by design, not tested in production.
Unit
kHz
%
µs
nA
Doc ID 17659 Rev 8
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