English
Language : 

STL4P3LLH6 Datasheet, PDF (7/13 Pages) STMicroelectronics – High avalanche ruggedness
STL4P3LLH6
Electrical characteristics
Figure 8. Normalized V(BR)DSS vs temperature
9 %5 '66
QRUP
*,3*07


,' —$







      7- ƒ&
Figure 10. Normalized gate threshold voltage
vs. temperature
9*6 WK
QRUP
*,3*07

,' —$







      7- ƒ&
Figure 12. Source-drain diode forward
characteristics
96'
*,3')65
9
7M ƒ&


7M ƒ&
Figure 9. Capacitance variations
&
S)

*,3')65

&LVV




&&URVVVV


9'6 9
Figure 11. Normalized on-resistance vs.
temperature
5QR'6UP RQ

*,3*07
9*6 9






      7- ƒ&

7M ƒ&







 ,6' $
DocID024616 Rev 2
7/13