STL4P3LLH6 Datasheet, PDF (3/13 Pages) STMicroelectronics – High avalanche ruggedness

STL4P3LLH6
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
Unit
V_DS Drain-source voltage
V_GS Gate-source voltage
I_D
Drain current (continuous) at T_amb = 25 °C
I_D
I_DM ⁽¹⁾
Drain current (continuous) at T_amb = 100 °C
Drain current (pulsed)
P_TOT Total dissipation at T_amb = 25 °C
T_J
Operating junction temperature
T_stg
Storage temperature
1. Pulse width limited by safe operating area
30
V
± 20
V
4
A
2.75
A
16
A
2.4
W
150
°C
-55 to 150
°C
Note:
Table 3. Thermal resistance
Symbol
Parameter
R_thj-amb ⁽¹⁾ Thermal resistance junction-amb
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Value
52
Unit
°C/W
For the P-channel MOSFET the actual polarity of the voltages and the current must be
reversed.
DocID024616 Rev 2
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