STL4P3LLH6 Datasheet, PDF (1/13 Pages) STMicroelectronics – High avalanche ruggedness

STL4P3LLH6
P-channel 30 V, 0.048 Ω typ., 4 A STripFET™ H6 DeepGATE™
Power MOSFET in PowerFLAT™ 2x2 package
Datasheet - preliminary data
Features
1
2
3
1
2
3
6
5
4
PowerFLAT™ 2x2
Figure 1. Internal schematic diagram
1(D)
2(D)
3(G)
D
S
Order code
V_DSS
R_DS(on) max.
I_D
STL4P3LLH6 30 V 0.056 Ω at 10 V 4 A
• Very low on-resistance R_DS(on)
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
Applications
• Switching application
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ H6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low R_DS(on) in all
packages.
6(D)
5(D)
4(S)
AM11269v1
Order code
STL4P3LLH6
Table 1. Device summary
Marking
Package
4K3L
PowerFLAT™ 2x2
Packaging
Tape and reel
Note:
For the P-channel MOSFET the actual polarity of the voltages and the current must be
reversed.
December 2014
DocID024616 Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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