STE139N65M5 Datasheet, PDF (7/13 Pages) STMicroelectronics – N-channel 650 V, 0.014 (ohm) typ., 130 A, MDmesh V Power MOSFET in a ISOTOP package

STE139N65M5
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
VGS
(V)
VDS
12
VDD=520V
ID=65A
AM12614v1
VDS
(V)
500
10
400
8
300
6
200
4
2
100
0
0
0
100 200 300 400 Qg(nC)
Figure 10. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
1.10
I_D= 250µA
AM08899v1
1.00
Figure 9. Capacitance variations
C
(pF)
AM12615v1
100000
10000
Ciss
1000
100
Coss
10
Crss
1
0.1
1
10
100 VDS(V)
Figure 11. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2.1
1.7
ID = 65A
VGS= 10V
AM08900v1
0.90
0.80
0.70
-50 -25 0 25 50 75 100 TJ(°C)
Figure 12. Output capacitance stored energy
Eoss
(µJ)
70
AM12616v1
60
50
40
30
20
10
0
0 100 200 300 400 500 600 VDS(V)
1. Eon including reverse recovery of a SiC diode.
1.3
0.9
0.5
-50 -25 0 25 50 75 100 TJ(°C)
Figure 13. Switching losses vs gate
resistance ⁽¹⁾
E (μJ)
8000
7000
ID=80A
VDD=400V
TJ=25°C
6000
Eon
AM12617v1
5000
Eoff
4000
3000
2000
1000
0
0
10
20
30
40
RG(Ω)
DocID025117 Rev 1
7/13
13