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STE139N65M5 Datasheet, PDF (4/13 Pages) STMicroelectronics – N-channel 650 V, 0.014 (ohm) typ., 130 A, MDmesh V Power MOSFET in a ISOTOP package
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Electrical characteristics
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On /off states
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = 650 V
drain current (VGS = 0) VDS = 650 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source
on- resistance
VGS = 10 V, ID = 65 A
STE139N65M5
Min. Typ. Max. Unit
650
V
10 µA
100 µA
±100 nA
3
4
5
V
0.014 0.017 Ω
Symbol
Parameter
Table 5. Dynamic
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
- 15600 - pF
-
365
- pF
-
9
- pF
Co(tr)(1)
Equivalent
capacitance time
related
VGS = 0, VDS = 0 to 520 V
- 1559 - pF
Co(er)(2)
Equivalent
capacitance energy
related
VGS = 0, VDS = 0 to 520 V
-
360
- pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
1.2
-
Ω
Qg
Total gate charge
VDD = 520 V, ID = 65 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 15)
-
363
- nC
-
88
- nC
-
164
- nC
1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0
to 80% VDSS.
2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0
to 80% VDSS.
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