STE139N65M5 Datasheet, PDF (5/13 Pages) STMicroelectronics – N-channel 650 V, 0.014 (ohm) typ., 130 A, MDmesh V Power MOSFET in a ISOTOP package

STE139N65M5
Electrical characteristics
Symbol
Parameter
t_d(v)
t_r(v)
t_f(i)
t_c(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Table 6. Switching times
Test conditions
V_DD = 400 V, I_D = 80 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 16)
(see Figure 19)
Min. Typ. Max. Unit
- 295 - ns
-
56
- ns
-
37
- ns
-
84
- ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD Source-drain current
-
Source-drain current (pulsed)
I_SDM ⁽¹⁾ Source-drain current (pulsed)
-
V_SD ⁽²⁾ Forward on voltage
I_SD = 130 A, V_GS = 0
-
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
-
I_SD = 130 A, di/dt = 100 A/µs _-
V_DD = 100 V (see Figure 16)
-
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 130 A, di/dt = 100 A/µs ^-
V_DD = 100 V, T_j = 150 °C
-
(see Figure 16)
-
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
130 A
520 A
520 A
1.5 V
570
ns
15
µC
53
A
720
ns
24
µC
68
A
DocID025117 Rev 1
5/13
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